WFF640 WFF640 WFF640 WFF640 symbol parameter v a lue units v dss drain source v o ltage 200 v i d continuous drain current(@ t c =25 ) 18* a continuous drain current(@ t c =100 ) 12* a i dm drain current pulsed (note1) 72* a v gs gate to source v oltage 30 v e as single pulsed a v alanche energy ( note 2) 258 mj e ar repetitive a valanche energy ( note 1) 13 mj dv/dt peak diode recove r y dv/dt (note 3) 5.5 v/ns p d t ot a l po w er dissipation(@ t c =2 5 ) 44 w derating factor above 25 0.35 w/ t j , t s tg junction and storage t emperature -55~150 t l channel t e mperature 300 r ev . a j u n .2 0 1 0 c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . silic silic silic silic o o o o n n n n n-c n-c n-c n-c h h h h a a a a nn nn nn nn el el el el mos mos mos mos f f f f et et et et features 18a,200 v . r ds(on ) (max 0 . 1 8 )@v gs =10v ultra-low gate charge( t y pical 1 6 nc) fast s w itchi n g capabili t y 100% a valanche t e sted isolation voltage ( v iso = 4000v ac ) ma x imum junction t e mperature range( 1 5 0 ) general descripti o n this po w er mosfet is produced using winsemi s advanc e d planar stripe, dmos technolog y . this latest technolo g y has been especia l ly designed to minimi z e on-state resistance, have a high rugged avalanche characteristics. th i s devices is specially w ell suited for low voltage applications such as automoti v e, high ef fi ciency s w itching for dc/dc converters, and dc motor control. absolute maximum ratings *drain current limited by maximum j unction temperatu r e thermal thermal thermal thermal characteristics characteristics characteristics characteristics g g g g d d d d s s s s t t t t o o o o 220f 220f 220f 220f symbol parameter v a lue units min t y p max r q j c thermal resistance, junction-to-case - - 2.85 /w r qcs thermal resistance, case to sink - 0.5 - /w r q j a thermal resistance, junction-to-ambient - - 62.5 /w
WFF640 WFF640 WFF640 WFF640 2 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance electrical characte r istics (tc = 25 c) characteristics symbol test condition min type max unit gate leakage current i gss vgs = 30 v, vds = 0 v - - 1 0 0 na gate ? source breakdown voltage v (br)gss ig = 10 a, vds = 0 v 30 - - v drain cut ? off current i dss vds = 200 v, vgs = 0 v - - 10 a drai n ? source breakd o w n voltage v (br)dss id = 250 a, vgs = 0 v 200 - - v gate threshold voltage v gs(th) vds = 10 v, i d =250 a 2 - 4 v drai n ? source on resistance r ds(on) vgs = 10 v, id = 9a - - 0.18 ? for w a r d transconductance gfs vds = 50 v, i d =9a 6.7 - - s input capacitance c i s s vds = 25 v, vgs = 0 v, f = 1 mhz - 1300 1760 pf reverse transfer capacitan c e c r s s - - 65 output capacitance c o s s - - 245 s w itc h ing time rise time tr vdd =100 v, id = 18 a rg=25 ? (note4,5) - 54 - ns turn ? on time ton - 104 - fall time tf - 327 - turn ? off time toff - 108 - total gate charge (gat e ? source plus gate ? drain) qg vdd = 160 v, vgs = 10 v, id = 18a (note4,5) - - 70 nc gate ? source charge qgs - 8 13 gate ? drain ( mille r ) char g e qgd - 22 39 sourc e ? drain ratings and characte r istics (ta = 25 c) characteristics s y mb o l test condition min t y pe max unit continuous drain reverse current i dr - - - 18 a pulse drain reverse current i drp - - - 72 a for w a r d voltage (diode) v dsf idr = 18 a, v g s = 0 v - 1.4 1.5 v reverse recove r y time trr idr = 18a, vgs = 0 v, didr / dt = 100 a / s - 195 - ns reverse recove r y charge qrr - 1.48 - c note 1.repeativity rating :pulse w i dth limited by junction temperature 2.l=18.5mh, i as = 18a,v dd =50 v , r g =0 ,starting t j =25 3.i sd 18a,di/d t 300 a /us, v dd WFF640 WFF640 WFF640 WFF640 3 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig. 1 on-st a t e cha r acte r istics fig.2 t rans fe r cha r acte r istics fig.3 on- r e sistance v a ri a t ion vs d r ain cu r r ent fig.5 on- r e sistance v a ri a t ion vs j u nction t e mperatu r e fig.4 maximum a v a lan c h e ene r g y vs on-st a t e cu r r ent fig.6 g a t e cha r ge cha r acte r isti cs
WFF640 WFF640 WFF640 WFF640 4 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.7 maximum sa f e operation a r ea fig.8 maximum d r ain cu r r ent vs case t e mperatu r e fig.9 t ransient t h e r mal r e sponse cu r v e
WFF640 WFF640 WFF640 WFF640 5 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.10 g a t e t e st ci r cuit & w a v e f o r m fig.11 r e sisti v e swit c h ing t e st ci r cuit & w a v e f o r m fig.1 2 un c l amped inducti v e swit c h ing t e st ci r cuit & w a v e f o r m
WFF640 WFF640 WFF640 WFF640 6 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.13 p e ak diode r e c ov e r y dv/dt t e st ci r cuit & w a v e f o r m
WFF640 WFF640 WFF640 WFF640 7 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance t t t t o o o o -220f -220f -220f -220f package package package package dimension dimension dimension dimension unit: unit: unit: unit: mm mm mm mm
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